Our Team has extensive experience in the development and fabrication of Indium Phosphide (InP) devices. CSI is now bringing our expertise to this rapidly expanding market. Although this technology has been around for many years, it is now leading the way to higher scale integration and more advanced applications. The market for these devices is growing exponentially and portends limited availability for hyper-scalers and others for the foreseeable future.​ 

 

Today’s Indium Phosphide supply chain is not prepared for the switch from copper to photonics.  InP manufacturing is almost exclusively managed through captive fabs using 3” and 4” wafers which have limited capacity to meet the new demand.​

 

Historically, the higher cost and smaller wafer size of InP limited the use of InP as an integration platform.   In the past decade, most development was done in silicon. Today, with the introduction of new 150mm substrates, InP can meet the performance requirements of future generations of integrated photonics while achieving competitive economies of scale and superior photonic integration on a single substrate. These advances are critical for AI, Defense and Aerospace and many other commercial applications.​

 

The United States has no “open” foundries allowing fabless companies to access this technology for their applications. Additionally, there are no domestic high-volume production InP fabs.​

 

Combined Semiconductor is opening a US-based facility in order to allow for better access to high production/open fabs and a more sustainable local supply chain. We will also have an advanced optical packaging and testing facility on-site in order to better serve our industry.​

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