With over 25 years of experience in development and fabrication of Indium Phosphide (InP) devices, Combined Semiconductor is now bringing our expertise to this expanding market. Although this technology has been around for many years, it is now leading the way to higher scale integration and more advanced applications. The market for these devices is growing exponentially and portends limited availability for hyper-scalers and others.​

 

Today’s Indium Phosphide supply chain is poorly prepared for the ongoing AI revolution.  InP manufacturing is almost exclusively managed through captive fabs built 30 to 40 years ago on small 2”, 3” and 4” wafers which have limited capacity to meet the new demand driven by the insatiable demand of AI data centers.​

 

Historically, the higher cost and smaller wafer size of InP limited the use of InP as an integration platform.   In the past decade, most development was done in silicon which has now reached its limit for data transfer. Today, with the introduction of new 150mm wafers, InP can meet the performance requirements of future generations of integrated photonics while achieving competitive economies of scale and superior photonic integration on a single substrate. These advances are critical for AI, Defense and Aerospace applications.​

 

The United States has no “open” foundries allowing for lab to fab applications. Additionally, there are no domestic high volume production InP fabs.​

 

Combined Semiconductor is building a US based facility in order to allow for better access to high production/open fabs and more sustainable local supply chain. We will also have an advanced optical packaging and testing facility on-site in order to better serve our customers.​

 

We are the future of Photonics!